Investigation of negative transient current of argon-implanted GaAs using photoinduced transient-current spectroscopy

The investigation of deep levels of argon-implanted LEC-grown semi-insulating GaAs with implantation dosages ranging from 1*1011 to 1*1015 cm-2 has been performed. Using a photoinduced transient-current spectroscopy (PITCS) it was demonstrated that, for implantation dosages below 1*1013 cm-2, a negative peak or negative transient current (NTC) was observed in the temperature range from 330 to 350 K. The magnitude of this negative peak increased with dosage up to a level of 1*1012 cm-2, beyond which it decreased with dosage. The dosage dependence of the EL3 peak height and the resistance of the specimen have also been investigated. It was observed that the variation of the EL3 peak height with dosage was similar to the variation of the magnitude of the negative peak, that is the EL3 peak height likewise increased with dosage up to 1*1012 cm-2, and then decreased. The resistance of the original high-resistivity specimen dropped abruptly when the dosage reached 1*1012 cm-2. This critical dosage (1*1012 cm-2) was found to be a threshold for the generation of a highly disordered state.

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