Charge-induced self-feedback optical bistable device: switching time and spatial resolution

We report extensive experimental and theoretical studies on the properties of an optical bistable device called the charge-induced self-feedback device (CSFD) which is a variation of a self electro-optic effect device (SEED). In the mechanism, a novelty: of the CSFD consists of the feedback due to field-screening, resulting in independent switchings of optical beams focused at different spots on the CSFD without the help of pixellated structures. We experimentally demonstrate independent switchings without pixellation. In addition, a spatial resolution of the CSFD on such a device operation is found to be limited by an in-plane spreading of photoexcited carriers enhanced by a lateral electric-field induced by photoexcitation. Also, it is experimentally demonstrated that shortening carrier escape times leads to an improvement on the spatial resolution in terms of the suppression of the in-plane carrier spreading. Furthermore, an investigation on dynamics of the photoexcited carriers in the device reveals that the switching time of the CSPD is on the order of nanosecond, limited mainly by the hole escape time. >

[1]  Fox,et al.  Resonantly enhanced electron tunneling rates in quantum wells. , 1989, Physical review letters.

[2]  Katsuhiro Obata,et al.  Optical Nonlinearity Caused by Charge-Induced Field Screening in DC-Biased Quantum Well Structures , 1989 .

[3]  C. Burrus,et al.  Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device , 1984 .

[4]  David A. B. Miller,et al.  Quantum well carrier sweep out: relation to electroabsorption and exciton saturation , 1991 .

[5]  Diffusive electrical conduction in high‐speed p‐i‐n photodetectors , 1992 .

[6]  C. Burrus,et al.  Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect , 1984 .

[7]  D. Miller,et al.  High speed absorption recovery in quantum well diodes by diffusive electrical conduction , 1989 .

[8]  A. Gossard,et al.  Optical Detection of Resonant Tunneling of Electrons in Quantum Wells , 1990, OSA Proceedings on Picosecond Electronics and Optoelectronics.

[9]  C. Burrus,et al.  The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation , 1985 .

[10]  Thomas F. Carruthers,et al.  Picosecond optical mixing in fast photodetectors , 1986 .

[11]  P. J. Bradley,et al.  Photoconductive response time of a multiple quantum well pin modulator , 1988 .

[12]  Uziel Koren,et al.  Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation , 1990 .

[13]  I. Suemune,et al.  Observation of optical bistability by charge-induced self-feedback in biased AlGaAs multiple quantum well structures , 1990 .

[14]  A. L. Lentine,et al.  Symmetric self-electrooptic effect device : optical set-reset latch, defferential logic gate and differential modulator/detector , 1989 .

[15]  G. D. Boyd,et al.  Dynamic optical switching of symmetric self‐electro‐optic effect devices , 1990 .