Load-impedance and bias-network dependence of power amplifier with second harmonic injection

For the power amplifier (PA) used in code-division multiple-access cellular phones, the supply voltage is switched from around 1.5 to 3.5 V at the boundary transmission power of several decibels higher than 10 dBm using a DC-DC converter to improve operation efficiency. Recently, however, this boundary transmission power is being raised. We applied the second harmonic injection to reduce distortion and maximize the boundary transmission power under low supply voltage. This paper presents the design concept of the PA's load impedance and bias network with second harmonic injection using Volterra-series analysis. We also present a design of the final stage of the PA under low supply voltage and show that the final stage has a drain efficiency of 53% at an output power of 21 dBm.

[1]  Donald L. Schilling,et al.  Electronic Circuits: Discrete and Integrated , 1980 .

[2]  R. Minasian Intermodulation Distortion Analysis of MESFET Amplifiers Using the Volterra Series Representation , 1980 .

[3]  Yongcai Hu,et al.  A Nevv Method of Third-Order Intermodulation Reduction in Nonlinear Microwave Systems , 1986 .

[4]  Stephen A. Maas,et al.  Nonlinear microwave circuits , 1988 .

[5]  W. Bosch,et al.  Measurement and simulation of memory effects in predistortion linearizers , 1989 .

[6]  C. S. Aitchison,et al.  A low third order intermodulation amplifier with harmonic feedback circuitry , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[7]  Paolo Banelli,et al.  Digital linearizer for RF amplifiers , 1997, IEEE Trans. Broadcast..

[8]  M.B. Steer,et al.  A novel envelope-termination load-pull method for ACPR optimization of RF/microwave power amplifiers , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[9]  Yasuhiro Nakasha,et al.  Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones , 1999 .

[10]  C. N. Canagarajah,et al.  Second harmonic zone injection for amplifier linearisation , 1999, 1999 IEEE 49th Vehicular Technology Conference (Cat. No.99CH36363).

[11]  C. S. Aitchison,et al.  Improvement of third-order intermodulation product of RF and microwave amplifiers by injection , 2001 .

[12]  Gary Hau,et al.  A highly efficient linearized wide-band CDMA handset power amplifier based on predistortion under various bias conditions , 2001 .

[13]  Yoshikazu Murakami,et al.  An analysis of higher‐order of a GaAs FET depending on IMD source impedance and its application to a design of low‐distortion MMIC power amplifiers , 2002 .

[14]  S. Kusunoki,et al.  Power amplifier module with digital adaptive predistortion for cellular phone , 2002, IMS 2002.

[15]  Chun-Wah Fan,et al.  Theoretical and experimental study of amplifier linearization based on harmonic and baseband signal injection technique , 2002 .

[16]  S. Kusunoki,et al.  Analysis and Improvement of Asymmetrical Spectrum-Regrowth of Predistortion Power Amplifier , 2003 .