Memristive operation mode of a site-controlled quantum dot floating gate transistor

We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

[1]  Masashi Kawasaki,et al.  Interface resistance switching at a few nanometer thick perovskite manganite active layers , 2006 .

[2]  Y. Pershin,et al.  Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics , 2008, 0806.2151.

[3]  Alfred Forchel,et al.  Inversion of hysteresis in quantum dot controlled quantum-wire transistor , 2009 .

[4]  R. Nicoll,et al.  Long-term potentiation--a decade of progress? , 1999, Science.

[5]  L.O. Chua,et al.  Memristive devices and systems , 1976, Proceedings of the IEEE.

[6]  Christian Schneider,et al.  Charging dynamics of a floating gate transistor with site-controlled quantum dots , 2014 .

[7]  M. Kozicki,et al.  Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.

[8]  G. Bi,et al.  Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type , 1998, The Journal of Neuroscience.

[9]  P. Hänggi,et al.  Reaction-rate theory: fifty years after Kramers , 1990 .

[10]  K. Terabe,et al.  Quantized conductance atomic switch , 2005, Nature.

[11]  Jen-Inn Chyi,et al.  Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots , 2000 .

[12]  M. Kamp,et al.  Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration , 2009, Nanotechnology.

[13]  L. Chua.  Memristor-The missing circuit element , 1971 .

[14]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[15]  C. Schneider,et al.  Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots , 2010 .

[16]  T. Bliss,et al.  A synaptic model of memory: long-term potentiation in the hippocampus , 1993, Nature.

[17]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[18]  D. Schroeder,et al.  MemFlash device: floating gate transistors as memristive devices for neuromorphic computing , 2014 .

[19]  Leon O. Chua,et al.  Three Fingerprints of Memristor , 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.

[20]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[21]  Andrew S. Cassidy,et al.  A million spiking-neuron integrated circuit with a scalable communication network and interface , 2014, Science.

[22]  Alfred Forchel,et al.  Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots , 2002 .

[23]  L. Abbott,et al.  Competitive Hebbian learning through spike-timing-dependent synaptic plasticity , 2000, Nature Neuroscience.

[24]  Dietmar Schroeder,et al.  Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell , 2012 .

[25]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .

[26]  Stephen Y. Chou,et al.  A Silicon Single-Electron Transistor Memory Operating at Room Temperature , 1997, Science.