Effects of surface topography on oxide deposition rates using TEOS/O2 chemistry
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[1] J. Abelson,et al. SURFACE REACTION PROBABILITY IN HYDROGENATED AMORPHOUS SILICON GROWTH , 1994 .
[2] T. Cale,et al. The role of oxygen excitation and loss in plasma‐enhanced deposition of silicon dioxide from tetraethylorthosilicate , 1992 .
[3] A. Gallagher,et al. Surface reaction probability of film‐producing radicals in silane glow discharges , 1990 .
[4] J. Perrin,et al. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon , 1990 .
[5] D. Flamm,et al. Silicon oxide deposition from tetraethoxysilane in a radio frequency downstream reactor: Mechanisms and step coverage , 1989 .
[6] P. J. Chantry,et al. A simple formula for diffusion calculations involving wall reflection and low density , 1987 .
[7] Chuang‐Chuang Tsai,et al. Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon , 1986 .
[8] A. Phelps,et al. THEORY OF ELECTRON COLLISION EXPERIMENTS AT INTERMEDIATE AND HIGH GAS DENSITIES. Technical report No. 32 , 1966 .