论文信息 - Improved negative feedback technique to reduce drain conductance of GaAs MESFETs for precision analogue ICs

Improved negative feedback technique to reduce drain conductance of GaAs MESFETs for precision analogue ICs

An improved negative feedback technique to reduce the absolute magnitude of the frequency-dependent drain conductance inherent in GaAs MESFETs has been demonstrated for low-threshold (less than ?1 V) devices. The new dual-threshold arrangement guarantees that the primary device of the self-bootstrapping pair operates at the current saturation region without relying on the existence of early saturation. A factor of 11 reduction in the drain conductance was realised. A simple inverter amplifier of identical composite driver and load has demonstrated 21 dB improvement in voltage gain over that using single FETs.

W. S. Lee | J. Mun

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