Polysilicon FET devices for large area input/output applications

The properties of FETs made in a polysilicon semiconductor are discussed both theoretically and experimentally. A two-dimensional solution for the potential in a polysilicon grain under the influence of a transverse field produced by the gate shows that the channel mobility can be described by an activation energy which depends on the gate voltage. Calculated drain currents based on parameters derived from Hall measurements are in good agreement with actual devices. In addition, circuits such as a latch with a liquid crystal driver are described.