Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design
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Gerard Ghibaudo | Alban Zaka | Daniel Gloria | David Roy | Florian Cacho | Laurent Negre | Samuel Boret | Patrick Scheer
[1] G. Ghibaudo,et al. Advanced 45nm MOSFET small-signal equivalent circuit aging under DC and RF hot carrier stress , 2011, 2011 International Reliability Physics Symposium.
[2] G. Ghibaudo,et al. Hot carrier impact on the small signal equivalent circuit , 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.
[3] Guido T. Sasse,et al. The hot carrier degradation rate under AC stress , 2010, 2010 IEEE International Reliability Physics Symposium.
[4] Pierpaolo Palestri,et al. On the accuracy of current TCAD hot carrier injection models in nanoscale devices , 2010 .
[5] F. Kuper,et al. MOSFET Degradation Under RF Stress , 2008, IEEE Transactions on Electron Devices.
[6] J.A.M. Geelen,et al. An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
[7] N. Camilleri,et al. Extracting small-signal model parameters of silicon MOSFET transistors , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
[8] Vincent Huard,et al. General framework about defect creation at the Si∕SiO2 interface , 2009 .
[9] K. Seki,et al. Circuit aging simulator (CAS) , 1988, Technical Digest., International Electron Devices Meeting.
[10] G. Dambrine,et al. Influence of gate offset spacer width on SOI MOSFETs HF properties , 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.