论文信息 - Low-threshold InGaAlAs/lnP vertical-cavity surface-emitting laser diodes for 1.8 /spl mu/m wavelength range

Low-threshold InGaAlAs/lnP vertical-cavity surface-emitting laser diodes for 1.8 /spl mu/m wavelength range

The buried tunnel junction (BTJ) technique has successfully been used to realise the first electrically pumped 1.83 /spl mu/m vertical-cavity surface-emitting lasers. Excellent CW performance with submilliamp threshold currents, differential quantum efficiencies up to 26% and single-mode operation has been achieved.

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