Variability-Aware Device Optimization under ION and Leakage Current Constraints

In this paper, a novel device optimization methodology is presented that is constrained by the total leakage and the ON current of the device. The devised technique locates a maximum yield rectangular cube in a three-dimensional feasible space composed by oxide thickness, halo peak doping, and halo characteristic length parameters. The center of this cube is considered as the maximum yield design point with the highest immunity against variations. Monte Carlo simulations show that the optimized bulk-MOS device for 45 nm gate length satisfies the on current and leakage constraints under a variability of up to 30% in the three parameters

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