论文信息 - Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequencies

Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequencies

Abstract A group of equations which can be used to compute the intrinsic and extrinsic base resistance of bipolar transistors at low currents and low frequencies, from mask information and sheet resistance data have been derived from two dimensional (2-D) computer simulations. The effects of transistor geometry, emitter aspect ratio and sheet resistance are studied.

David J. Roulston | François Hébert | D. Roulston | F. Hébert

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