论文信息 - Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition - 字舞流文

Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition

Y. Petrov | A. Baraban | V. Drozd | V. A. Dmitriev | V. A. Prokof’ev

[1] A. Baraban,et al. Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition , 2019, Technical Physics Letters.

[2] E. Filatova,et al. Photoluminescence of Ta2O5 films formed by the molecular layer deposition method , 2016 .

[3] S. Samarin,et al. Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy , 2016 .

[4] J. Robertson,et al. High-K materials and metal gates for CMOS applications , 2015 .

[5] Y. Petrov,et al. Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method , 2013 .

[6] A. Baraban,et al. Electrical properties of Si-Al2O3 structures grown by ML-ALE , 1994 .

[7] R. Mevrel,et al. Les revêtements par diffusion , 1987 .

[8] S. Samarin,et al. Luminescence of SiO2 layers on silicon at various types of excitation , 2019, Journal of Luminescence.

[9] V. Gritsenko,et al. REVIEWS OF TOPICAL PROBLEMS: Application and electronic structure of high-permittivity dielectrics , 2010 .

[10] B. G. Yacobi,et al. Cathodoluminescence Microscopy of Inorganic Solids , 1990, Springer US.