Deformation Potentials in AIIBIVC2V Ternary Chalcopyrite Semiconductors

Deformation potentials of valence and conduction bands in A II B IV C 2 V chalcopyrite semiconductors are calculated from the variation of the energy gap with temperature and pressure. From a comparison with their binary analogues A III B V it is found that values of deformation potentials in these compounds are considerably higher than in the binaries which could explain their lower carrier mobility

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