论文信息 - MRAM and FinFETs team up

MRAM and FinFETs team up

Integrating magnetoresistive random access memory with advanced fin field-effect transistor technology provides a route towards energy-efficient computing.

Arijit Raychowdhury | A. Raychowdhury

[1] Gordon E. Moore,et al. Progress in digital integrated electronics [Technical literaiture, Copyright 1975 IEEE. Reprinted, with permission. Technical Digest. International Electron Devices Meeting, IEEE, 1975, pp. 11-13.] , 2006, IEEE Solid-State Circuits Society Newsletter.

[2] J. Slonczewski. Current-driven excitation of magnetic multilayers , 1996 .

[3] S. Mudanai,et al. 22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).