The 1.6-kV AlGaN/GaN HFETs

The breakdown voltages in unpassivated nonfield-plated AlGaN/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGaN/GaN channel. After elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mum. The corresponding static ON-resistance was as low as 3.4 mOmegamiddotcm<sup>2</sup>. This translates to a power device figure-of-merit V<sub>BR</sub> <sup>2</sup>/R<sub>ON</sub>=7.5times10<sup>8</sup> V<sup>2</sup>middotOmega<sup>-1</sup> cm<sup>-2</sup>, which, to date, is among the best reported values for an AlGaN/GaN HFET

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