Studies of annealing of neutron‐produced defects in silicon by transconductance measurements of junction field‐effect transistors

Annealing behavior of neutron‐produced defects in silicon was studied by measuring the phase angle ϑ of the small‐signal transconductance of the junction field‐effect transistors (JFET’s). Three deep levels (N‐1, N‐2, and N‐3 levels) in n‐type silicon and two deep levels (P‐1 and P‐2 levels) in p‐type silicon, introduced by irradiation, annealed gradually. Their energy levels and capture cross sections have been already reported by us. Three deep levels (P‐3, P‐4, and P‐5 levels) were observed in annealed p‐type silicon in the temperature range 150–300 °C. For these defects, ϑ was measured as a function of frequency to obtain the time constant. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of P‐3, P‐4, and P‐5 were estimated to be Ev+0.21, Ev+0.40, and Ev+0.30 eV, respectively. The calculated hole capture cross sections of these levels were 2.2×10−15, 8.7×10−14, and 1.2×10−14 cm2, respectively. Comparison with o...

[1]  A. Usami,et al.  Admittance studies of neutron‐irradiated silicon p+‐n diodes , 1977 .

[2]  A. Usami,et al.  Investigation of neutron‐produced defects in silicon by transconductance measurements of junction field‐effect transistors , 1976 .

[3]  James W. Corbett,et al.  EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes , 1976 .

[4]  E. R. Chenette,et al.  Neutron-induced noise in junction field-effect transistors , 1975, IEEE Transactions on Electron Devices.

[5]  O. Wada,et al.  Evaluation of Deep Levels in Semiconductors Using Field Effect Transconductance , 1975 .

[6]  A. Usami,et al.  Effect of oxygen and copper on the defect cluster in neutron‐irradiated p‐type silicon , 1974 .

[7]  J. Corbett,et al.  EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under 〈 110 〉 -uniaxial stress , 1974 .

[8]  J. Corbett,et al.  EPR studies in neutron-irradiated silicon: a negative charge state of a nonplanar five-vacancy cluster (V$sub 5$$sup -$) , 1973 .

[9]  C. Su,et al.  Positron annihilation in neutron-irradiated p-type silicon , 1973 .

[10]  J. W. Walker,et al.  Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon , 1973 .

[11]  C. Sah,et al.  Thermally stimulated capacitance for shallow majority‐carrier traps in the edge region of semiconductor junctions , 1973 .

[12]  W. Oldham,et al.  Admittance of p-n junctions containing traps☆ , 1972 .

[13]  G. D. Watkins,et al.  Radiation effects in semiconductors , 1971 .

[14]  B. L. Gregory,et al.  Neutron Produced Trapping Centers in Junction Field Effect Transistors , 1971 .

[15]  M. Swanson,et al.  Photoconductivity in Neutron‐Irradiated p‐Type Si , 1970 .

[16]  H. Stein Electrically active defect annealing in neutron and in ion-damaged Si , 1970 .

[17]  B. L. Gregory Minority Carrier Recombination in Neutron Irradiated Silicon , 1969 .

[18]  H. Stein PHOTOCONDUCTIVITY STUDY OF DIVACANCY FORMATION IN NEUTRON‐IRRADIATED Si , 1969 .

[19]  J. Lori,et al.  Characteristics of Neutron Damage in Silicon , 1968 .

[20]  H. Stein Electrical Studies of Neutron‐Irradiated p‐Type Silicon: Defect Structure and Annealing , 1968 .

[21]  D. Wilson Capacitance Recovery in Neutron-Irradiated Silicon Diodes by Majority and Minority Carrier Trapping , 1968 .

[22]  H. Stein,et al.  ELECTRICAL STUDIES OF NEUTRON-IRRADIATED n-TYPE Si: DEFECT STRUCTURE AND ANNEALING. , 1967 .

[23]  R. E. Whan OXYGEN-DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON , 1966 .

[24]  G. Newell,et al.  SPIN 1 CENTERS IN NEUTRON IRRADIATED SILICON , 1963 .

[25]  B. R. Gossick,et al.  DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS , 1959 .