ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Process Synthesis

Since the first demonstration of an integrated circuit in 1958, the ambitious semiconductor technology has been racing for almost six decades to change the face of the Earth. Moore’s Law and the ‘virtuous cycle’ of investment, scaling and market growth have fueled the sweeping influence that the semiconductor industry now has on every aspect of our everyday lives and the global economic system. Thanks to the striking drop in the cost of computing power, from 5.52 US dollars for a single transistor in 1954 to a billionth of a dollar in 2016, countless human dreams have been realized; from the Apollo missions to the AI and social networking era. While the continued scaling of traditional complementary metal–oxide–semiconductor (CMOS) devices took over the market with its impressive progress, another paradigm of electronics has taken shape: flexible electronics. Instead of focusing on shrinking critical dimensions and reducing power consumption, the growing field of flexible electronics rather aims to leverage compliant form factors and lightweight designs to usher radically novel electronic devices into our lives. Flexible displays, electronic textiles, bio-inspired sensors, and wearable or implantable medical devices, just to name a few, are out-of-reach applications for the rigid form factor of conventional wafer-based electronics. Flexible electronics is more than just a fill-in or an alternative for where conventional electronics fall short. If the integrated circuit was the game changer of the twentieth century, then flexible electronics is the catalyst for the paradigm shift of the twenty-first century.

[1]  D. Xia,et al.  High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric , 2010 .

[2]  Masaya Uchida,et al.  Pr0.5Sr0.5CoO3の温度変化と電子線照射により引起された磁区構造の変化 , 2005 .

[3]  Ki-Bum Kim,et al.  Structural and Electrical Properties of Atomic Layer Deposited Al‐Doped ZnO Films , 2011 .

[4]  T. Miyata,et al.  Transparent conducting ZnO thin films prepared on low temperature substrates by chemical vapour deposition using Zn(C5H7O2)2 , 1994 .

[5]  Jung‐Kun Lee,et al.  Thermoelectric properties of Al-doped mesoporous ZnO thin films , 2013 .

[6]  C. Ballif,et al.  Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells , 2010 .

[7]  B. Demirci,et al.  Polycrystalline indium-doped ZnO thin films: preparation and characterization , 2008 .

[8]  A. Nathan,et al.  Low-temperature materials and thin-film transistors for electronics on flexible substrates , 2006 .

[9]  L. K. Malhotra,et al.  Electrical, optical and annealing characteristics of ZnO:Al films prepared by spray pyrolysis☆ , 1991 .

[10]  Jianhua Hu,et al.  Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition , 1992 .

[11]  Olivier Renault,et al.  Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O , 2002 .

[12]  K. Ramamurthi,et al.  Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis , 2011 .

[13]  Yi-Cheng Lin,et al.  A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film , 2008 .

[14]  H. Zeng,et al.  ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing , 2013 .

[15]  B. Chung,et al.  Low-temperature growth of ZnO thin films by atomic layer deposition , 2007 .

[16]  Hyoungsub Kim,et al.  Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition , 2010 .

[17]  P. Williams,et al.  Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics , 2013 .

[18]  Christophe Ballif,et al.  Opto-electronic properties of rough LP-CVD ZnO:B for use as TCO in thin-film silicon solar cells , 2007 .

[19]  Stefan Bengtsson,et al.  Properties of Al2O3-films deposited on silicon by atomic layer epitaxy , 1997 .

[20]  Jin-seong Park,et al.  Review of recent developments in amorphous oxide semiconductor thin-film transistor devices , 2012 .

[21]  M. Ritala,et al.  In Situ Quartz Crystal Microbalance and Quadrupole Mass Spectrometry Studies of Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum and Water , 2001 .

[22]  J. Hupp,et al.  Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors , 2008 .

[23]  S. Irvine,et al.  Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide. , 2001, Physical review letters.

[24]  C. S. Chen,et al.  The Intrinsic Room-Temperature Ferromagnetism in ZnO:Co Thin Films Deposited by PLD , 2012 .

[25]  S. George,et al.  Properties of ZnO / Al2 O 3 Alloy Films Grown Using Atomic Layer Deposition Techniques , 2003 .

[26]  R. McLean,et al.  Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering , 2003 .

[27]  Hyoungsub Kim,et al.  Improved Electrical Stability in the Al Doped ZnO Thin-Film-Transistors Grown by Atomic Layer Deposition , 2011 .

[28]  Jang-Yeon Kwon,et al.  Effect of Al Distribution on Carrier Generation of Atomic Layer Deposited Al-Doped ZnO Films , 2011 .

[29]  Hyungjun Kim,et al.  ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor , 2008 .

[30]  S. Chang,et al.  Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate , 2010 .

[31]  Shui-Tong Lee,et al.  Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices , 2003 .

[32]  H. S. Bae,et al.  Ultraviolet detecting properties of ZnO-based thin film transistors , 2004 .

[33]  Steven M. George,et al.  ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements , 2002 .

[34]  I. Volintiru,et al.  Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition , 2007 .

[35]  Makoto Konagai,et al.  Atomic layer deposition of ZnO transparent conducting oxides , 1997 .

[36]  J. Horwitz,et al.  Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices , 2000 .

[37]  Frank Henecker,et al.  Hydrogen: a relevant shallow donor in zinc oxide. , 2002, Physical review letters.

[38]  Tara P. Dhakal,et al.  Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition , 2012 .

[39]  C. Ku,et al.  Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow , 2010 .

[40]  Ilaria Ciofini,et al.  Wavelength‐Emission Tuning of ZnO Nanowire‐Based Light‐Emitting Diodes by Cu Doping: Experimental and Computational Insights , 2011 .

[41]  Steven M. George,et al.  Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry , 1997 .

[42]  N. Dasgupta,et al.  Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity , 2010 .

[43]  Jae Hyun Kim,et al.  Tunable Electrical and Optical Properties in Composition Controlled Hf:ZnO Thin Films Grown by Atomic Layer Deposition , 2012 .

[44]  Tae-Seok Lee,et al.  Excitonic ultraviolet lasing in ZnO-based light emitting devices , 2007 .

[45]  Robert P. H. Chang,et al.  Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition , 2005 .

[46]  M. Ritala,et al.  Studies on the morphology of Al2O3 thin films grown by atomic layer epitaxy , 1996 .

[47]  L. Chernyak,et al.  ZnO p–n Homojunction Random Laser Diode Based on Nitrogen‐Doped p‐type Nanowires , 2013 .

[48]  Joonsuk Park,et al.  Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition , 2011 .

[49]  H. Nanto,et al.  Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering , 1985 .

[50]  Sophie LaRochelle,et al.  Wearable Contactless Respiration Sensor Based on Multi-Material Fibers Integrated into Textile , 2017, Sensors.

[51]  Daniel Lincot,et al.  Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry , 2000 .

[52]  David-Wei Zhang,et al.  Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition , 2011 .

[53]  K. Dawson,et al.  Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission , 2012 .

[54]  D. Cameron,et al.  Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process , 1994 .

[55]  I. Tanaka,et al.  Atomic structures of supersaturated ZnO-Al2O3 solid solutions , 2008 .

[56]  C. Hwang,et al.  Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant , 2005 .

[57]  A. Tukiainen,et al.  Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices , 2010 .

[58]  H. Makino,et al.  Atomic layer deposition and characterization of Ga-doped ZnO thin films , 2007 .

[59]  Jiaping Han,et al.  Effect of Al and Mn doping on the electrical conductivity of ZnO , 2001 .

[60]  A. Ott,et al.  Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates , 1999 .

[61]  Zhonghua Deng,et al.  Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering , 2010 .

[62]  J. Skarp,et al.  Atomic layer epitaxy growth of doped zinc oxide thin films from organometals , 1994 .

[63]  Chien-Yie Tsay,et al.  Effect of dopants on the structural, optical and electrical properties of sol–gel derived ZnO semiconductor thin films , 2013 .