Neutral radical deposition from silane discharges

The fractional contributions of the various SiHn radicals (n=0–3) to deposition are calculated for low‐power, pure‐silane rf and dc discharges. This is done using a radical diffusion plus reaction equation, combined with current knowledge of SiH4 dissociation fractionation, of SiHn+SiH4 reactions, and of the distributed source of radicals. The conclusion reached is that more than 98% of neutral radical deposition is by SiH3 for typical deposition pressures (>100 mT at 240 °C). The effect of SiH3+SiH3 reactions at higher power is also evaluated using an estimated reaction rate coefficient (k3). The resulting loss in deposition rate is given as a function of film growth rate and of k3.

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