Ultra-high-speed InP-based heterostructure device technology: InP-based HFETs and HBTs : Ultra-high-speed compound semiconductor ICs
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This paper presents state-of-the-art ultra-high-speed InP-based heterostructure de vice technologies. InP-based HFET (Heterostructure Field-Effect Transistors) and HBT (Heterojunction Bipolar Transistors) device technologies are discussed with application to integrated circuits and optoelectronic integrated circuits.