Equivalent mechanical properties of through silicon via interposers - A unit model approach

Abstract A closed-form description of the equivalent mechanical properties of through-silicon via (TSV) interposers is given in this paper. The goal is to homogenize a unit TSV model for global analysis of interposer design and optimization. The equivalence between the heterogeneous TSV model and its homogenized counterpart is in the sense that, both models have an identical radial deformation at the boundary when subjected to the same loadings. The equivalent mechanical properties derived herein are: the in-plane equivalent Young’s modulus, bulk modulus, and coefficient of thermal expansion (CTE); the out-of-plane Young’s modulus, rigidity modulus, CTE, and the Poisson’s ratio. These equivalent properties form a transversely isotropic description of the homogenized TSV model, and can be readily used in finite element or computer-aided design package for globally characterizing the thermomechanical response of the interposer, or simulating its interaction with the annexed layers in the package. These equivalent properties are primarily developed for interposers with vias of uniform diameter through the thickness. When applying to interposers with tapered vias, the predicted results will be perturbed to an extent that is determined collectively by the aspect ratio and tilt angle of the tapered vias. The analytical work, which does not consider the thin liner layer, is compared to some known results that had considered the liner layer, to understand the extent of approximation.

[1]  S. Nemat-Nasser,et al.  Micromechanics: Overall Properties of Heterogeneous Materials , 1993 .

[2]  Z. Hashin Analysis of Composite Materials—A Survey , 1983 .

[3]  Impact of high density TSVs on the assembly of 3D-ICs packaging , 2013 .

[4]  M. Taya,et al.  Thermal Expansion Coefficients and Thermal Stresses in an Aligned Short Fiber Composite With Application to a Short Carbon Fiber/Aluminum , 1985 .

[5]  R. Boudreau Foreword contributions from the 50th electronic components and technology conference , 2001 .

[6]  B. Sammakia,et al.  Predictive Model for Optimized Design Parameters in Flip-Chip Packages and Assemblies , 2007, IEEE Transactions on Components and Packaging Technologies.

[7]  J. D. Eshelby The determination of the elastic field of an ellipsoidal inclusion, and related problems , 1957, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[8]  Ephraim Suhir,et al.  Interfacial Stresses in Bimetal Thermostats , 1989 .

[9]  Sheng-Tsai Wu,et al.  Thermal and mechanical design and analysis of 3D IC interposer with double-sided active chips , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[10]  B. Dang,et al.  3D silicon integration , 2008, 2008 58th Electronic Components and Technology Conference.

[11]  A. Jain,et al.  Analytical and Numerical Modeling of the Thermal Performance of Three-Dimensional Integrated Circuits , 2010, IEEE Transactions on Components and Packaging Technologies.

[12]  D. Hale The physical properties of composite materials , 1976 .

[13]  Y.-L. Shen,et al.  Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging , 2012, Microelectron. Reliab..

[14]  R. V. Goldstein,et al.  A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias , 2012, IEEE Transactions on Electron Devices.

[15]  S. Shtrikman,et al.  A Variational Approach to the Theory of the Effective Magnetic Permeability of Multiphase Materials , 1962 .

[16]  David Z. Pan,et al.  A fast simulation framework for full-chip thermo-mechanical stress and reliability analysis of through-silicon-via based 3D ICs , 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

[17]  Katsuyuki Sakuma,et al.  Three-dimensional silicon integration , 2008, IBM J. Res. Dev..

[18]  R. Hill A self-consistent mechanics of composite materials , 1965 .

[19]  Rodney Hill,et al.  Theory of mechanical properties of fibre-strengthened materials: I. Elastic behaviour , 1964 .

[20]  Richard Schapery Thermal Expansion Coefficients of Composite Materials Based on Energy Principles , 1968 .

[21]  J. D. Eshelby,et al.  The elastic field outside an ellipsoidal inclusion , 1959, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[22]  John H. Lau,et al.  Estimation for equivalent thermal conductivity of silicon-through vias TSVs used for 3D IC integration , 2011, 2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).

[23]  Suk-kyu Ryu,et al.  Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects , 2011, IEEE Transactions on Device and Materials Reliability.

[24]  Y. Benveniste,et al.  A new approach to the application of Mori-Tanaka's theory in composite materials , 1987 .

[25]  S. Timoshenko,et al.  Theory of elasticity , 1975 .

[26]  Paul S. Ho,et al.  Thermomechanical reliability of through-silicon vias in 3D interconnects , 2011, 2011 International Reliability Physics Symposium.

[27]  Jian Xu,et al.  Demystifying 3D ICs: the pros and cons of going vertical , 2005, IEEE Design & Test of Computers.

[28]  Zvi Hashin,et al.  The Elastic Moduli of Heterogeneous Materials , 1962 .

[29]  K. Tanaka,et al.  Average stress in matrix and average elastic energy of materials with misfitting inclusions , 1973 .

[30]  Luca Benini,et al.  Design Issues and Considerations for Low-Cost 3-D TSV IC Technology , 2010, IEEE Journal of Solid-State Circuits.

[31]  Zvi Hashin,et al.  Effective thermal expansion coefficients and specific heats of composite materials , 1970 .