A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology

A 5.8-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 1.65 dB and an associated gain of 15 dB is implemented in a standard SiGe bipolar technology. It dissipates 13 mW from a 1-V supply (with only 9 mW in the gain stages). The measured transducer gain is 13 dB with a noise figure of 2.1 dB at 5.8 GHz. This is believed to be the lowest noise figure reported for a 5.8-GHz LNA in any production-level technology. The transducer gain is above 10 dB from 3.8 to 8 GHz. At 5.8 GHz, the input return loss and reverse isolation are 6 and 28 dB, respectively.

[1]  S. Voinigescu,et al.  SiGe HBT technology: device and application issues , 1995, Proceedings of International Electron Devices Meeting.

[2]  Keith A. Jenkins,et al.  An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[3]  Keith A. Jenkins,et al.  RF components implemented in an analog SiGe bipolar technology , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[4]  Kevin W. Kobayashi,et al.  Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applications , 1995 .

[5]  U. Lott Low DC power monolithic low noise amplifier for wireless applications at 5 GHz , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[6]  J.R. Long,et al.  RF analog and digital circuits in SiGe technology , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.