论文信息 - Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis - 字舞流文

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

N. Cherkashin | A. Claverie | M. Carrada | M. Ameen | D. Tsoukalas | P. Dimitrakis | G. Benassayag | P. Normand | C. Bonafos | A. Agarwal | E. Kapetanakis | K. Beltsios | D. Skarlatos | V. Soncini | C. Sohl

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