A model for charge transfer in buried-channel charge-coupled devices at low temperature

Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall generation-recombination theory. Incorporated in the model are the three-dimensional Poole-Frenkel barrier lowering theory of A. K. Jonscher (1967) and J. L. Hartke (1968) and the low-temperature form of Poisson's equation. Reasonable agreement of the model with experimental data taken from the buried-channel CCDs of a PtSi Schottky barrier infrared image sensor is found. Moreover, the value for the capture cross section of electrons to the shallow phosphorus level in silicon inferred from the model follows the cascade theory for capture by M. Lax (1959) and agrees roughly with determinations made by other experimenters. >

[1]  R. Brown,et al.  Low-Temperature Recombination of Electrons and Donors in n-Type Germanium and Silicon , 1967 .

[2]  G. E. Smith,et al.  Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..

[3]  J. L. Hartke.  The Three‐Dimensional Poole‐Frenkel Effect , 1968 .

[4]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[5]  J. C. Irvin,et al.  Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K , 1968 .

[6]  T.J. Tredwell,et al.  Channel potential and channel width in narrow buried-channel MOSFET's , 1984, IEEE Transactions on Electron Devices.

[7]  W. Kosonocky,et al.  Free charge transfer in charge-coupled devices , 1972 .

[8]  G. L. Pearson,et al.  Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus , 1949 .

[9]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[10]  A. Jonscher,et al.  Electronic properties of amorphous dielectric films , 1967 .

[11]  J. Frenkel,et al.  On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors , 1938 .

[12]  S. Chamberlain,et al.  Numerical methods for the charge transfer analysis of charge-coupled devices , 1974 .

[13]  H. Levinstein,et al.  Recombination of Electrons at Ionized Donors in Silicon at Low Temperatures , 1973 .

[14]  F. D. Shepherd,et al.  Silicon Schottky retinas for infrared imaging , 1973 .

[15]  A. Honig,et al.  Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impurities☆ , 1961 .

[16]  William E. Engeler,et al.  SURFACE CHARGE TRANSPORT IN SILICON , 1970 .

[17]  W. Kosonocky,et al.  160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor , 1985, IEEE Transactions on Electron Devices.

[18]  R. Hall.  Electron-Hole Recombination in Germanium , 1952 .

[19]  E. Rosencher,et al.  Transient-current study of field-assisted emission from shallow levels in silicon , 1984 .

[20]  R. Mertens,et al.  Energy-gap change in silicon n-type inversion layers at low temperature , 1990 .

[21]  Leonard J. M. Esser,et al.  Charge transfer devices , 1973 .

[22]  R. D. Nelson,et al.  Application of charge-coupled devices to infrared detection and imaging , 1975, Proceedings of the IEEE.

[23]  N. Saks,et al.  Time dependence of depletion region formation in phosphorus‐doped silicon MOS devices at cryogenic temperatures , 1979 .

[24]  J.D. Plummer,et al.  Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology , 1987, IEEE Transactions on Electron Devices.

[25]  R. J. Strain,et al.  B.S.T.J. brief: The buried channel charge coupled device , 1972 .

[26]  Masafumi Kimata,et al.  A 512/spl times/512-element PtSi Schottky-barrier infrared image sensor , 1987 .

[27]  Masafumi Kimata,et al.  Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices , 1983 .

[28]  M. Lenzlinger,et al.  Charge Transfer in Charge‐Coupled Devices , 1971 .

[29]  D. V. Lang,et al.  Capacitance Transient Spectroscopy , 1977 .

[30]  D.F. Barbe,et al.  Imaging devices using the charge-coupled concept , 1975, Proceedings of the IEEE.

[31]  P. Landsberg,et al.  A theoretical study of field-enhanced emission (Poole-Frenkel effect) , 1989 .

[32]  William Des Jardin,et al.  Wide-field-of-view PtSi infrared focal plane array , 1990, Defense, Security, and Sensing.

[33]  M. Martini,et al.  Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and silicon , 1973 .

[34]  W. F. Kosonocky,et al.  "Construction And Performance Of A 320 X 244-Element IR-CCD Imager With PtSi Schottky-Barrier Detectors , 1989, Defense, Security, and Sensing.