Fabrication and characterization of waveguide for all optical switching device based on intersubband transition in JI-VI based quantum well

We report fabrication of the high mesa type waveguide structure for all optical switching device based on intersubband (ISB) transition in (CdS/ZnSe)/BeTe multiple quantum wells (MQWs). In this waveguide, we observed ISB absorption at a 1.55p. m optical communication wavelength.