Negative-differential-resistance effects in the TlGaTe2 ternary semiconductor.
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I-U characteristics measured in TlGaTe 2 single crystals consist of two regimes: a linear one at low current densities and a nonlinear one at higher current densities. In the nonlinear part [negative-differential-resistance (NDR) region] of the curves, a considerable increase of the temperature of the sample was registered. Additionally, voltage oscillations were observed in this region. Arrhenius plots (lnσ vs 10 3 /T 0 plots) recorded in the Ohmic part of the I-U curves show a temperature dependence of the conductivity