A Method for Estimating Impedance Parameters for Electrochemical Systems That Exhibit Pseudoinductance

The oxida t ion of sil icon to si l ica is the only react ion occurr ing at h igh oxygen pressures, but i t is insignificant at low pressures be low 10 -2 a tm at 1400~ or 10-6 a tm at 1200~ as shown in Fig. 1.14 Gaseous SiO is a dominant p roduc t of the oxida t ion at low oxygen pressures. Al though oxygen is a s t ronger ox idant than chlorine, under reduced oxygen atmospheres , the two are comparable . Thus the format ion of Si-O-C1 phases could be considered f rom the direct oxychlor ina t ion of Si and the gas phase in teract ions