论文信息 - Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In0.25Ga0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the absorption layers with the same total thickness. The PV effect is almost absent when the In0.25Ga0.75N single layer is used as the absorption layer. This could be due to the large leakage current caused by the poor material quality and the relatively small shunt resistance. Devices with superlattice structure illuminated under a one-sun air-mass 1.5-G condition exhibit an open-circuit voltage of around 1.4 V and a short-circuit current density of around 0.8 mA/cm2 corresponding to a conversion efficiency of around 0.58%.

[1] D. Friedman,et al. Effects of oxygen contamination on diffusion length in p+-n GaInNAs solar cells , 2003 .

[2] Fernando Ponce,et al. High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .

[3] E. Haller,et al. Fermi-level stabilization energy in group III nitrides , 2005 .

[4] N. El-Masry,et al. Phase separation in InGaN grown by metalorganic chemical vapor deposition , 1998 .

[5] J. Sheu,et al. TOPICAL REVIEW: The doping process and dopant characteristics of GaN , 2002 .

[6] O. H. Hughes,et al. Semiconductor Physics , 1967, Nature.

[7] S.J. Chang,et al. High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD , 2006, IEEE Photonics Technology Letters.

[8] Eugene E. Haller,et al. Unusual properties of the fundamental band gap of InN , 2002 .

[9] Ian T. Ferguson,et al. Design and characterization of GaN∕InGaN solar cells , 2007 .

[10] D. Starikov,et al. Fabrication and characterization of 2.3eV InGaN photovoltaic devices , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.