Deep‐level transient spectroscopy of HF‐cleaned and sulfur‐passivated InP metal/nitride/semiconductor structures

Deep‐level bulk and interface defect states in InP metal/insulator/semiconductor diodes have been investigated using capacitance‐voltage measurements and deep‐level transient spectroscopy. The InP surfaces were cleaned with an ultraviolet light/ozone/HF process followed by an optional polysulfide passivation and then capped with a layer of silicon nitride produced by remote plasma‐enhanced chemical‐vapor deposition. Polysulfide treatment reduced the bulk trap concentrations produced during contact annealing, reducing a bulk trap at 0.33 eV below the measurement limits and reducing a 0.45 eV trap to a concentration of 5×1013 cm−3. The density of interface states close to the conduction‐band edge also decreased with the polysulfide treatment.

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