Three-Dimensional Integration: A Tutorial for Designers
暂无分享,去创建一个
[1] Joel Silberman,et al. A shorted global clock design for multi-GHz 3D stacked chips , 2012, 2012 Symposium on VLSI Circuits (VLSIC).
[2] Jaejin Lee,et al. 25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[3] Subramanian S. Iyer,et al. 3D integration review , 2011, Science China Information Sciences.
[4] Hiroshi Takahashi,et al. A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
[5] Subramanian S. Iyer,et al. Three-dimensional integration: An industry perspective , 2015 .
[6] S. S. Iyer. The evolution of dense embedded memory in high performance logic technologies , 2012, 2012 International Electron Devices Meeting.
[7] Matthew M. Ziegler,et al. 4.1 22nm Next-generation IBM System z microprocessor , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.
[8] So-Ra Kim,et al. 8Gb 3D DDR3 DRAM using through-silicon-via technology , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
[9] Dongho Lee,et al. 17.4 A 14nm 1.1Mb embedded DRAM macro with 1ns access , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.
[10] A. Yoshida,et al. A study on package stacking process for package-on-package (PoP) , 2006, 56th Electronic Components and Technology Conference 2006.
[11] J. Jeddeloh,et al. Hybrid memory cube new DRAM architecture increases density and performance , 2012, 2012 Symposium on VLSI Technology (VLSIT).
[12] X. Gu,et al. A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding , 2008, 2008 IEEE International Electron Devices Meeting.
[13] J. Safran,et al. Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation , 2014, 2014 IEEE International Electron Devices Meeting.