论文信息 - Experimental determination of the intrinsic series resistance of vertical power diodes by means of a special test structure

Experimental determination of the intrinsic series resistance of vertical power diodes by means of a special test structure

In this paper the capability of a new test pattern to extract both the intrinsic series resistance and the injection level of vertical power diodes is presented. The method is based on the measure of the d.c. voltage manifesting at a sense region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally experimental results obtained on a vertical diode are presented.

Annunziata Sanseverino | Santolo Daliento | Salvatore Bellone

[1] Neville H. Fletcher,et al. The High Current Limit for Semiconductor Junction Devices , 1957, Proceedings of the IRE.

[2] S. Daliento,et al. A measurement method of the ideal I–V characteristics of diodes up to the built-in voltage limit , 1999 .

[3] D.D. Tang,et al. Method for determining the emitter and base series resistances of bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[4] A. Herlet. The forward characteristic of silicon power rectifiers at high current densities , 1968 .