论文信息 - A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes

A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes

This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time $(\text{T}_{\text{FM}-\text{M}})$ and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time $(\text{T}_{\text{W}-\text{PAGE}-\text{RST}})$ for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time $(\text{T}_{\text{W}-\text{PAGE}})$ combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in TFM-M, and $99+\%$ reduction in $\text{T}_{\text{W}}-\text{PAGE}$ for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write

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