A simple and effective carrier lifetime evaluation method with diode test structures in IGBT

A simple and effective method of evaluating the carrier lifetime of a power device chip is proposed. In this method, Test Element Groups (TEGs) of diodes fabricated in the periphery of an Insulated Gate Bipolar Transistor (IGBT) chip were used as carrier lifetime monitors of the IGBT's n/sup -/ layer. The measured forward voltage drops (V/sub f/) of the diode-TEGs were compared with simulated V/sub f/ and the lifetime was determined from the lifetime parameter of simulations. The estimated lifetime value was verified by the reverse recovery current characteristic.