Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices
暂无分享,去创建一个
[1] A. Krasnov. Selection of dielectrics for alternating-current thin-film electroluminescent device , 1999 .
[2] A. Krasnov. Direct observation of traps responsible for positive space charge in alternating-current thin-film electroluminescent devices , 1999 .
[3] A. Oprea,et al. Interface charge relaxation in ZnS:Mn based alternating-current thin-film electroluminescent devices , 1998 .
[4] A. Krasnov,et al. Threshold voltage trends in ZnS : Mn-based alternating-current thin-film electroluminescent devices : role of native defects , 1998 .
[5] A. Krasnov,et al. Optimization of alternating-current thin-film electroluminescent displays , 1998 .
[6] E. Bringuier. Charge transfer in ZnS‐type electroluminescence , 1989 .
[7] S. Owen,et al. Studies of a high frequency hysteresis phenomenon in ZnS:Mn actfel devices , 1988 .
[8] R. Crandall,et al. Evidence for recombination‐controlled electroluminescence in alkaline‐earth sulfides , 1987 .
[9] W. E. Howard,et al. Thin film electroluminescent displays , 1981 .
[10] W. Howard,et al. WA-B2 on the memory behavior of thin-film electroluminescent devices , 1979, IEEE Transactions on Electron Devices.
[11] G. Vincent,et al. Electric field effect on the thermal emission of traps in semiconductor junctions , 1979 .
[12] D. G. Thomas,et al. Luminescence of Inorganic Solids , 1967 .
[13] A. Krasnov. Alternating-current thin-film electro-luminescent devices : Effect of fabrication conditions on aging and failure defect formation , 1998 .
[14] M. Sakurai,et al. Luminescence and conduction charge in thin-film electroluminescent devices , 1984 .
[15] W. Howard,et al. A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devices , 1982 .
[16] Elias Burstein,et al. Tunneling Phenomena in Solids , 1969 .