High-speed operation of InP/InGaAsP/InGaAs avalanche photodiodes
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[1] Katsuhiko Nishida,et al. InGaAsP heterostructure avalanche photodiodes with high avalanche gain , 1979 .
[2] Y. Matsushima,et al. New type InGaAs/InP heterostructure avalanche photodiode with buffer layer , 1981, IEEE Electron Device Letters.
[3] S. R. Forrest,et al. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes , 1982 .
[4] S. R. Forrest,et al. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current , 1981 .
[5] Osamu Mikami,et al. New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region , 1980 .