Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory
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Dirk Wellekens | J. Van Houdt | L. Haspeslagh | Pieter Blomme | Bogdan Govoreanu | K. van der Zanden | David P. Brunco | J. De Vos | J. D. Vos | B. Govoreanu | J. V. Houdt | L. Haspeslagh | K. V. D. Zanden | D. Brunco | D. Wellekens | P. Blomme | D. Ruiz Aguado | D. R. Aguado
[1] F. Neuilly,et al. Performance and Reliability of 2-Transistor FN/FN Flash Arrays with Hafnium Based High-K Inter-Poly Dielectrics for Embedded NVM , 2006, 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
[2] Guido Groeseneken,et al. Cost-effective cleaning and high-quality thin gate oxides , 1999, IBM J. Res. Dev..
[3] Zheng Xu,et al. Properties of titanium nitride film deposited by ionized metal plasma source , 1999 .
[4] W. D. Wang,et al. Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si , 2002 .
[5] M. Rosmeulen,et al. VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices , 2003, IEEE Electron Device Letters.
[6] Bogdan Govoreanu,et al. Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities , 2005 .
[7] E. Shero,et al. Adsorption of Moisture and Organic Contaminants on Hafnium Oxide, Zirconium Oxide, and Silicon Oxide Gate Dielectrics , 2003 .