论文信息 - Non-quasi-static carrier dynamics of MOSFETs under low-voltage operation

Non-quasi-static carrier dynamics of MOSFETs under low-voltage operation

We analyze the carrier dynamics in MOSFETs under low voltage operation for a 90 nm CMOS technology. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. The switching frequency is found to decrease with reduced voltage due to diminished inversion condition and thus driving capability, which can be modeled with increased transit delay.

[1] M. Miura-Mattausch,et al. Importance of ballistic carriers for the dynamic response in sub-100 nm MOSFETs , 2002, IEEE Electron Device Letters.

[2] Soo-Young Oh,et al. Transient analysis of MOS transistors , 1980 .

[3] Hans Jürgen Mattausch,et al. The Physics and Modeling of Mosfets - Surface-Potential Model HiSIM , 2008, International Series on Advances in Solid State Electronics and Technology.

[4] H.J. Mattausch,et al. HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[5] M. Miura-Mattausch,et al. A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis , 2006, IEEE Transactions on Electron Devices.