论文信息 - High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching - 字舞流文

High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching

M. Rodwell | A. Gossard | V. Chobpattana | S. Stemmer | J. Law | B. Thibeault | A. Carter | Sanghoon Lee | Cheng-Ying Huang | W. Mitchell | D. Elias