The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results show that materials external to the sensitive volume can affect the experimentally measured cross-section curve.

[1]  J. Ziegler Stopping of energetic light ions in elemental matter , 1999 .

[2]  F. Faccio,et al.  Computational method to estimate Single Event Upset rates in an accelerator environment , 2000 .

[3]  J.W. Howard,et al.  Role of heavy-ion nuclear reactions in determining on-orbit single event error rates , 2005, IEEE Transactions on Nuclear Science.

[4]  R.A. Reed,et al.  The effect of metallization Layers on single event susceptibility , 2005, IEEE Transactions on Nuclear Science.

[5]  Robert A. Weller,et al.  An algorithm for computing screened Coulomb scattering in Geant4 , 2005 .

[6]  R. Pease,et al.  Subbandgap laser-induced single event effects: carrier generation via two-photon absorption , 2002 .

[7]  D. McMorrow,et al.  Demonstration of single-event effects induced by through-wafer two-photon absorption , 2004, IEEE Transactions on Nuclear Science.

[8]  Robert Ecoffet,et al.  Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs] , 1997 .

[9]  L.W. Massengill,et al.  Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design , 2005, IEEE Transactions on Nuclear Science.

[10]  R. Koga,et al.  Comparative SEU sensitivities to relativistic heavy ions , 1998 .

[11]  M. Xapsos Applicability of LET to single events in microelectronic structures , 1992 .

[12]  G. L. Hash,et al.  Impact of ion energy on single-event upset , 1998 .

[13]  S. Buchner,et al.  Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption , 2005, IEEE Transactions on Nuclear Science.

[14]  E. Blackmore,et al.  LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics , 2003 .