Inverse lithography technology (ILT): keep the balance between SRAF and MRC at 45 and 32 nm
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[1] Alan E. Rosenbluth,et al. Optimum mask and source patterns to print a given shape , 2002 .
[2] Kafai Lai,et al. Optimum mask and source patterns to print a given shape , 2001, SPIE Advanced Lithography.
[3] Linyong Pang,et al. Inverse lithography technology (ILT): What is the impact to the photomask industry? , 2006, Photomask Japan.
[4] Hisashi Watanabe,et al. Automated design of halftoned double-exposure phase-shifting masks , 1995, Advanced Lithography.
[5] J. Sethian,et al. Fronts propagating with curvature-dependent speed: algorithms based on Hamilton-Jacobi formulations , 1988 .
[6] Daniel S. Abrams,et al. Fast inverse lithography technology , 2006, SPIE Advanced Lithography.
[7] Seong-Woon Choi,et al. Manufacturability evaluation of model-based OPC masks , 2002, Photomask Technology.
[8] Avideh Zakhor,et al. Optimal binary image design for optical lithography , 1990, Advanced Lithography.
[9] Andreas Erdmann,et al. Improved mask and source representations for automatic optimization of lithographic process conditions using a genetic algorithm , 2004, SPIE Advanced Lithography.
[10] Bahaa E. A. Saleh,et al. Image construction through diffraction-limited high-contrast imaging systems: an iterative approach , 1985 .
[11] Yan Wang,et al. Inverse lithography technology at chip scale , 2006, SPIE Advanced Lithography.
[12] Linyong Pang,et al. Inverse lithography technology principles in practice: unintuitive patterns , 2005, SPIE Photomask Technology.
[13] Chi-Yuan Hung,et al. Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation , 2006, SPIE Advanced Lithography.
[14] Avideh Zakhor,et al. Binary and phase-shifting image design for optical lithography , 1991, Other Conferences.