Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs

This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.

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