The optimization of technology ITO layers for thin-film solar cells
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The fulfilled optimization of ITO films for their using in the effective CdS/CdTe base solar cell design allowed to establish, that maximum figure of merit (8,0·10 <sup>4</sup> Ohm<sup>1</sup>) is characteristic for the layers deposited at the substrate temperature 400°C. The optimization of the layer optical and electrical properties is ensured by the top main charge carrier mobility μ=44 cm<sup>2</sup>/(V.s) and the maximum transmittance of heterosystem ITO/Poly in the visible range T<inf>400–800</inf> = 0.61.