Negative Capacitance Behavior in a Leaky Ferroelectric

We present a simulation study of the negative capacitance effect incorporating leakage through the ferroelectric (FE) negative capacitor. The dynamics of the FE is modeled using the Landau-Khalatnikov equation. When an FE and a dielectric are simply connected in series without a metal contact between them, the stabilization of negative capacitance remains unchanged irrespective of leakage. However, when a metal is used, any finite leakage through the FE makes it impossible to stabilize negative capacitance at the steady state. Nonetheless, when a voltage is applied, the series configuration enters the negative capacitance state and as long as the gate voltage is cycled faster than the time needed by the leakage current to discharge all the capacitors, the transistor shows improved subthreshold swing. These results are expected to provide insight into understanding and analyzing recent experimental results on negative capacitance.

[1]  Ankit Jain,et al.  Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor , 2014, IEEE Transactions on Electron Devices.

[2]  Chenming Hu,et al.  Low power negative capacitance FETs for future quantum-well body technology , 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

[3]  S. Datta,et al.  Can the subthreshold swing in a classical FET be lowered below 60 mV/decade? , 2008, 2008 IEEE International Electron Devices Meeting.

[4]  Enrique Miranda,et al.  Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors , 2010, IEEE Transactions on Electron Devices.

[5]  R. Cavin,et al.  Nanoelectronics: negative capacitance to the rescue? , 2008, Nature nanotechnology.

[6]  Sayeef Salahuddin,et al.  CMOS and Beyond: Extending CMOS with negative capacitance , 2015 .

[7]  Asif Khan,et al.  0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF , 2015, 2015 73rd Annual Device Research Conference (DRC).

[8]  David Jiménez,et al.  Ferroelectrics: Negative capacitance detected. , 2015, Nature materials.

[9]  L. You,et al.  Negative capacitance in a ferroelectric capacitor. , 2014, Nature materials.

[10]  Sayeef Salahuddin,et al.  Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. , 2014, Nano letters.

[11]  P. Solomon,et al.  It’s Time to Reinvent the Transistor! , 2010, Science.

[12]  M. H. Lee,et al.  Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[13]  A. O'Neill,et al.  Experimental observation of negative capacitance in ferroelectrics at room temperature. , 2014, Nano letters.

[14]  Asif Islam Khan,et al.  Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics , 2016, IEEE Transactions on Electron Devices.

[15]  C. Hu,et al.  Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation , 2011, 2011 International Electron Devices Meeting.

[16]  David J. Frank,et al.  The Quantum Metal Ferroelectric Field-Effect Transistor , 2014, IEEE Transactions on Electron Devices.

[17]  Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect , 2015, 1507.00764.

[18]  Xiaoqing Pan,et al.  Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures , 2011, 1103.4419.

[19]  Chandra Mouli,et al.  Switching Dynamics and Hot Atom Damage in Landau Switches , 2016, IEEE Electron Device Letters.

[20]  C. Shin,et al.  Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching , 2016, IEEE Electron Device Letters.

[21]  T. Ando,et al.  On the Electron and Hole Tunneling in a $ \hbox{HfO}_{2}$ Gate Stack With Extreme Interfacial-Layer Scaling , 2011, IEEE Electron Device Letters.

[22]  S. Datta,et al.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[23]  A. Ionescu,et al.  Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification , 2010, 2010 International Electron Devices Meeting.

[24]  Asif Islam Khan,et al.  Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor , 2016, IEEE Electron Device Letters.

[25]  Chandra Mouli,et al.  An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed , 2015 .

[26]  M. H. Lee,et al.  Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics , 2015, IEEE Electron Device Letters.

[27]  J. Shim,et al.  Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices. , 2015, Nano letters.

[28]  C. Hu,et al.  Non-hysteretic negative capacitance FET with Sub- 30mV/dec swing over 106X current range and ION of 0.3mA/μm without strain enhancement at 0.3V VDD , 2012 .

[29]  J. Íñiguez,et al.  Negative capacitance in multidomain ferroelectric superlattices , 2016, Nature.

[30]  S. Datta,et al.  Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors , 2016, IEEE Electron Device Letters.

[31]  A. M. Ionescu,et al.  Analytical model for predicting subthreshold slope improvement versus negative swing of S-shape polarization in a ferroelectric FET , 2012, Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2012.

[32]  Seung-Ki Joo,et al.  Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance , 2016 .

[33]  C. Hu,et al.  Circuit performance analysis of negative capacitance FinFETs , 2016, 2016 IEEE Symposium on VLSI Technology.

[34]  T. Hiramoto,et al.  On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film , 2016 .

[35]  D. Jimenez,et al.  Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors , 2010, 1103.3768.

[36]  Chenming Hu,et al.  Sub-60mV-swing negative-capacitance FinFET without hysteresis , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).