Effects of stoichiometry on electrical, optical, and structural properties of indium nitride
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[1] E. Haller,et al. On the crystalline structure, stoichiometry and band gap of InN thin films , 2004 .
[2] P. Specht,et al. The influence of structural properties on conductivity and luminescence of MBE grown InN , 2004 .
[3] L. Eastman,et al. Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements , 2004 .
[4] S. Shrestha,et al. Nitrogen-rich indium nitride , 2004 .
[5] D. Alexandrov,et al. Energy band gaps of InN containing oxygen and of the InxAl1−xN interface layer formed during InN film growth , 2004 .
[6] E. Haller,et al. Effects of electron concentration on the optical absorption edge of InN , 2004 .
[7] B. Gil,et al. The value of the direct bandgap of InN: a re‐examination , 2004 .
[8] A. Kavokin,et al. Mie resonances, infrared emission, and the band gap of InN. , 2003, Physical review letters.
[9] M. Yoshimoto,et al. Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen , 2003 .
[10] D. J. Lockwood,et al. Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon , 2003 .
[11] Yoshiki Saito,et al. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys , 2003 .
[12] Lester F. Eastman,et al. Surface charge accumulation of InN films grown by molecular-beam epitaxy , 2003 .
[13] J. Silcox,et al. Electron-beam-induced damage in wurtzite InN , 2003 .
[14] Wladek Walukiewicz,et al. Effects of the narrow band gap on the properties of InN , 2002 .
[15] Eugene E. Haller,et al. Unusual properties of the fundamental band gap of InN , 2002 .
[16] Hiroshi Harima,et al. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. , 2002 .
[17] C. Stampfl,et al. Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials , 2000 .