The Integrated Gate-Commutated Thyristor: A New High-Efficiency, High- Power Switch for Series or Snubberless Operation

A novel high power semiconductor switch is now commercially available. The IGCT combines in a unique manner the advantages of a thyristor, low on-state voltage drop and high blocking voltage ratings, with the rugged switching behaviour of the transistor. After a brief overview of the technology used, the main characteristics of the 5SHY 35L4502 are presented. Finally, examples for possible applications are given.

[1]  A. Zuckerberger,et al.  Hard drive of high power GTOs: better switching capability obtained through improved gate-units , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.