Gain measurements in 1.3 µm InGaAsP-InP double heterostructure lasers
暂无分享,去创建一个
[1] M. Pilkuhn,et al. Temperature dependence of optical gain spectra in GaInAsP/InP double‐heterostructure lasers , 1981 .
[2] M. Asada,et al. The temperature dependence of the threshold current of GaInAsP/InP DH lasers , 1981, IEEE Journal of Quantum Electronics.
[3] Y. Horikoshi,et al. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers , 1979 .
[4] Niloy K. Dutta,et al. Gain‐current relation for In0.72Ga0.28As0.6P0.4 lasers , 1981 .
[5] M. Takusagawa,et al. Temperature characteristics of threshold current in InGaAsP/InP double‐heterostructure lasers , 1980 .
[6] J. Donnelly,et al. Gain spectra in GaInAsP/InP proton-bombarded stripe-geometry DH lasers , 1981 .
[7] B. Hakki,et al. Gain spectra in GaAs double−heterostructure injection lasers , 1975 .
[8] M. Adams,et al. Phase and group indices for double heterostructure lasers , 1979 .
[9] T. Ikegami,et al. Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasers , 1972 .
[10] C. Hwang,et al. Threshold behavior of (GaAl)As‐GaAs lasers at low temperatures , 1978 .
[11] R. Nelson. Near‐equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasers , 1979 .
[12] D. Rode. How much Al in the AlGaAs–GaAs laser? , 1974 .
[13] F. Stern. Gain-current relation for GaAs lasers with n-type and undoped active layers , 1973 .
[14] Niloy K. Dutta,et al. Calculated temperature dependence of threshold current of GaAs‐AlxGa1−xAs double heterostructure lasers , 1981 .
[15] G. Henshall,et al. Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers , 1980 .
[16] R. Nahory,et al. Temperature dependence of InGaAsP double-heterostructure laser characteristics , 1979 .
[17] Frank Stern,et al. Spontaneous and Stimulated Recombination Radiation in Semiconductors , 1964 .
[18] N. Dutta,et al. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination , 1981 .
[19] Niloy K. Dutta,et al. Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers , 1980 .
[20] M. Takusagawa,et al. Theoretical and experimental study of threshold characteristics in InGaAsP/InP DH lasers , 1979 .
[21] J. Shah,et al. Hot‐carrier effects in 1.3‐μ In1−xGaxAsyP1−y light emitting diodes , 1981 .
[22] N. Dutta. Calculated absorption, emission, and gain in In0.72Ga0.28As0.6P0.4 , 1980 .
[23] A. Sugimura,et al. Band-to-band Auger recombination effect on InGaAsP laser threshold , 1981 .
[24] Frank Stern,et al. Calculated spectral dependence of gain in excited GaAs , 1976 .
[25] Niloy K. Dutta,et al. The case for Auger recombination in In1−xGaxAsyP1−y , 1982 .