Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer

[1]  Richard A. Blanchard,et al.  The Trench Power MOSFET: Part I—History, Technology, and Prospects , 2017, IEEE Transactions on Electron Devices.

[2]  Quan-Yuan Feng,et al.  Design novel structure of high-voltage MOSFET with double trench gates , 2019, Microelectron. J..

[3]  R. Hueting,et al.  RESURF stepped oxide (RSO) MOSFET for 85V having a record-low specific on-resistance , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[4]  Chanho Park,et al.  A New 200 V Dual Trench MOSFET With Stepped Oxide for Ultra Low RDS(on) , 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[5]  R. van Dalen,et al.  Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[6]  Ben Chan,et al.  A new power W-gated trench MOSFET (WMOSFET) with high switching performance , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

[7]  W. Saito,et al.  On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness , 2020, IEEE Electron Device Letters.

[8]  Steven T. Peake,et al.  Low voltage TrenchMOS combining low specific RDS(on) and QG FOM , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[9]  Z. John Shen,et al.  Dielectric RESURF as an alternative to shield RESURF for an improved and easy-to-manufacture low voltage trench MOSFETs , 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

[10]  W. Saito,et al.  Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits , 2021, IEEE Journal of the Electron Devices Society.

[11]  Takuma Hara,et al.  Design criteria for shoot-through elimination in Trench Field Plate Power MOSFET , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[12]  M. Tack,et al.  XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit , 2006, 2006 International Electron Devices Meeting.

[13]  T. Kimoto,et al.  Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs based on FinFET effect , 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[14]  Luping Shi,et al.  III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin , 2011, IEEE Electron Device Letters.

[15]  T. Efland,et al.  A Rugged LDMOS for LBC5 Technology , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[16]  Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer , 2020, IEEE Electron Device Letters.

[17]  Kyle Terrill,et al.  60 V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[18]  Takahiro Kawano,et al.  100 V class multiple stepped oxide field plate trench MOSFET (MSO-FP-MOSFET) aimed to ultimate structure realization , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).