论文信息 - Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor were studied at increasing S/D voltages by micro-Raman spectroscopy with <1 /spl mu/m spatial resolution. These profiles imply high field regions near the gate edge of length /spl sim/0.4 /spl mu/m for S/D voltages between 45 and 75 V. Electric field strengths of /spl sim/1.2 and /spl sim/1.9 MV/cm are estimated for 45 and 75 V S/D voltage. The experimental results are in excellent agreement with 2-D Monte Carlo simulations.

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