A Novel 4-D Artificial-Neural-Network-Based Hybrid Large-Signal Model of GaAs pHEMTs

A novel hybrid large-signal model of GaAs pseudomorphic HEMTs (pHEMTs) is proposed for monolithic microwave integrated circuit design. This new model is based upon accurate electromagnetic (EM) description and creative multi-path artificial neural network (ANN) optimization. To precisely describe the EM effect in the high-frequency range, the extrinsic part of this model includes both lumped and distributed components. In order to re-grid the discrete data, the bias-dependent intrinsic elements are determined by ANNs rather than traditional interpolations. The dispersion effect is represented by nonlinear sources with the multi-path-dependent integration technique, which is described by processed multi-bias S-parameters. This proposed approach can be applicable to different bias conditions, which is also verified by different types of GaAs pHEMTs with good agreement. In addition, a class-AB Ka-band power amplifier and a Ka-band switch using a 0.15-μm GaAs pHEMT process were designed based on the novel hybrid model for further practical verification.

[1]  Giorgio Vannini,et al.  Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design , 2015 .

[2]  Z.D. Marinkovic,et al.  Bias-Dependent Model of Microwave FET S-parameters Based on Prior Knowledge ANNs , 2006, 2006 8th Seminar on Neural Network Applications in Electrical Engineering.

[3]  C. H. Chan,et al.  Modeling and simulation of higb-frequency integrated circuits based on scattering parameters , 1991, 28th ACM/IEEE Design Automation Conference.

[4]  D. Schreurs,et al.  Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design , 2010, IEEE Transactions on Microwave Theory and Techniques.

[5]  David E. Root,et al.  Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data , 1991, 1991 21st European Microwave Conference.

[6]  R. Daniels,et al.  A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach , 1993 .

[7]  W. Curtice.  A MESFET Model for Use in the Design of GaAs Integrated Circuits , 1980 .

[8]  G. Kompa,et al.  Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion , 2007, IEEE Transactions on Electron Devices.

[9]  Jianjun Xu,et al.  Dynamic FET model - DynaFET - for GaN transistors from NVNA active source injection measurements , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

[10]  Dominique Schreurs,et al.  A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects , 2003 .

[11]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[12]  I. Angelov,et al.  Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[13]  A. Caddemi,et al.  A New Millimeter-Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay , 2008, IEEE Transactions on Microwave Theory and Techniques.

[14]  G. Kompa,et al.  A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design , 2006, 2006 European Microwave Integrated Circuits Conference.

[15]  Tor A. Fjeldly,et al.  Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs , 2013, IEEE Transactions on Microwave Theory and Techniques.

[16]  G. Crupi,et al.  Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation , 2009, IEEE Transactions on Microwave Theory and Techniques.

[17]  David D. Wentzloff,et al.  IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology , 2010 .

[18]  L.C.N. de Vreede,et al.  The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[19]  W. R. Curtice,et al.  A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers , 1985, 1985 IEEE MTT-S International Microwave Symposium Digest.

[20]  Ying Wang,et al.  A Distributed Millimeter-Wave Small-Signal HBT Model Based on Electromagnetic Simulation , 2008, IEEE Transactions on Vehicular Technology.

[21]  Qi-Jun Zhang,et al.  Artificial neural networks for RF and microwave design - from theory to practice , 2003 .

[22]  D. E. Root,et al.  Future Device Modeling Trends , 2012, IEEE Microwave Magazine.

[23]  Michel Nakhla,et al.  A neural network modeling approach to circuit optimization and statistical design , 1995 .

[24]  Gunter Kompa,et al.  An improved physics-based nonquasi-static FET-model , 1997, 1997 27th European Microwave Conference.

[25]  G. Branner,et al.  A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects , 2009, IEEE Transactions on Microwave Theory and Techniques.

[26]  P. Roblin,et al.  New Trends for the Nonlinear Measurement and Modeling of High-Power RF Transistors and Amplifiers With Memory Effects , 2012, IEEE Transactions on Microwave Theory and Techniques.

[27]  A. Caddemi,et al.  Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs , 2006, IEEE Transactions on Microwave Theory and Techniques.

[28]  D. Schreurs,et al.  Extraction of small signal equivalent circuit model parameters for statistical modeling of HBT using artificial neural , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[29]  Viale Risorgimento,et al.  Influence of dispersive effects on large-signal models based on differential parameter integration , 2003 .

[30]  Zheng Zhong,et al.  A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling , 2012, IEEE Transactions on Microwave Theory and Techniques.

[31]  Zheng Zhong,et al.  A Consistent Charge Model of GaAs MESFETs for $Ku$-Band Power Amplifiers , 2011, IEEE Transactions on Microwave Theory and Techniques.

[32]  Branimir Pejcinovic,et al.  Comparison of non-linear MESFET models , 2002, 9th International Conference on Electronics, Circuits and Systems.

[33]  Gaofeng Wang,et al.  Dynamic Behavioral Modeling of Nonlinear Microwave Devices Using Real-Time Recurrent Neural Network , 2009, IEEE Transactions on Electron Devices.

[34]  A. Z. Markos,et al.  Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers , 2011, IEEE Transactions on Microwave Theory and Techniques.