Role of the seeding promoter in MoS2 growth by chemical vapor deposition.

The thinnest semiconductor, molybdenum disulfide (MoS2) monolayer, exhibits promising prospects in the applications of optoelectronics and valleytronics. A uniform and highly crystalline MoS2 monolayer in a large area is highly desirable for both fundamental studies and substantial applications. Here, utilizing various aromatic molecules as seeding promoters, a large-area, highly crystalline, and uniform MoS2 monolayer was achieved with chemical vapor deposition (CVD) at a relatively low growth temperature (650 °C). The dependence of the growth results on the seed concentration and on the use of different seeding promoters is further investigated. It is also found that an optimized concentration of seed molecules is helpful for the nucleation of the MoS2. The newly identified seed molecules can be easily deposited on various substrates and allows the direct growth of monolayer MoS2 on Au, hexagonal boron nitride (h-BN), and graphene to achieve various hybrid structures.

[1]  A. Reina,et al.  Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. , 2009, Nano letters.

[2]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[3]  Yuhei Miyauchi,et al.  Tunable photoluminescence of monolayer MoS₂ via chemical doping. , 2013, Nano letters.

[4]  P. Ajayan,et al.  Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.

[5]  David Turnbull,et al.  Kinetics of Heterogeneous Nucleation , 1950 .

[6]  K. Ko'smider,et al.  Electronic properties of the MoS 2 -WS 2 heterojunction , 2012, 1212.0111.

[7]  S. Pei,et al.  Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. , 2010, Nature materials.

[8]  S. Banerjee,et al.  Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.

[9]  Hugen Yan,et al.  Anomalous lattice vibrations of single- and few-layer MoS2. , 2010, ACS nano.

[10]  Xiaodong Xu,et al.  Vapor-solid growth of high optical quality MoS₂ monolayers with near-unity valley polarization. , 2013, ACS nano.

[11]  Madan Dubey,et al.  Large-Area 2-D Electronics: Materials, Technology, and Devices , 2013, Proceedings of the IEEE.

[12]  Liying Jiao,et al.  Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. , 2013, Journal of the American Chemical Society.

[13]  D. Nezich,et al.  Graphene Frequency Multipliers , 2009, IEEE Electron Device Letters.

[14]  Yu-Chuan Lin,et al.  Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. , 2012, Nano letters.

[15]  K. Shepard,et al.  Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.

[16]  D. Frenkel,et al.  Enhancement of protein crystal nucleation by critical density fluctuations. , 1997, Science.

[17]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[18]  Yu Huang,et al.  Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters , 2012, Nature materials.

[19]  M. Dresselhaus,et al.  Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. , 2013, Nano letters.

[20]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[21]  Yu Zhang,et al.  Epitaxial monolayer MoS2 on mica with novel photoluminescence. , 2013, Nano letters.

[22]  Timothy C. Berkelbach,et al.  Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. , 2013, Nature Materials.

[23]  Yi Liu,et al.  Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films , 2013, Scientific Reports.

[24]  George M. Whitesides,et al.  Control of crystal nucleation by patterned self-assembled monolayers , 1999, Nature.

[25]  Marco Bernardi,et al.  Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. , 2013, Nano letters.

[26]  J. Kong,et al.  Integrated circuits based on bilayer MoS₂ transistors. , 2012, Nano letters.

[27]  Mietek Jaroniec,et al.  Synergetic effect of MoS2 and graphene as cocatalysts for enhanced photocatalytic H2 production activity of TiO2 nanoparticles. , 2012, Journal of the American Chemical Society.

[28]  Jing Kong,et al.  Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition. , 2010, Nano letters.

[29]  Jing Kong,et al.  Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. , 2012, Nano letters.

[30]  Young-Jun Yu,et al.  Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices , 2013, Nature Communications.

[31]  S. Sellner,et al.  Thickness-dependent structural transitions in fluorinated copper-phthalocyanine (F16CuPc) films. , 2006, Journal of the American Chemical Society.

[32]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[33]  Jing Kong,et al.  van der Waals epitaxy of MoS₂ layers using graphene as growth templates. , 2012, Nano letters.

[34]  Han Wang,et al.  Graphene-Based Ambipolar RF Mixers , 2010, IEEE Electron Device Letters.

[35]  A. Neto,et al.  Two-dimensional crystals-based heterostructures: materials with tailored properties , 2012 .

[36]  Jun Lou,et al.  Large scale growth and characterization of atomic hexagonal boron nitride layers. , 2010, Nano letters.

[37]  Jun Lou,et al.  Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. , 2013, Nature materials.

[38]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[39]  L. Wirtz,et al.  Phonons in single-layer and few-layer MoS2 , 2011 .

[40]  N. Fletcher Size Effect in Heterogeneous Nucleation , 1958 .

[41]  J. Niemantsverdriet,et al.  Basic reaction steps in the sulfidation of crystalline MoO3 to MoS2, as studied by X-ray photoelectron and infrared emission spectroscopy , 1996 .

[42]  T. Taniguchi,et al.  BN/Graphene/BN Transistors for RF Applications , 2011, IEEE Electron Device Letters.