论文信息 - Uncooled InSb/In1−xAlxSb mid‐infrared emitter

Uncooled InSb/In1−xAlxSb mid‐infrared emitter

Using heterostructures of InSb/In1−xAlxSb, grown by molecular beam epitaxy, diodes have been fabricated which emit at room temperature with a peak wavelength in the range 5.5–5.8 μm and an internal efficiency of 0.2%.

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